Method for manufacturing magnetoresistance effect device and method for manufacturing magnetoresistance effect magnetic head

ABSTRACT

There is provided an MR manufacturing method comprising a film-forming process for forming a multilayer film including at least an antiferromagnetic layer  4,  a fixed layer  3  and a spacer layer  5,  a first patterning process for patterning the multilayer film after a predetermined pattern, a filing process for filling up the circumference of the patterned multilayer film, with an insulating layer  13  a process for forming a magnetic flux guide layer or a free layer also acting as the magnetic flux guide layer over this insulating layer  13  and the patterned multilayer film and a second patterning process by beam etching for simultaneously patterning the magnetic flux guide layer and the above-mentioned multilayer film to form the above-mentioned multilayer structure portion, wherein an incident angle of the etching beam are selected so that an angle θ of an etching surface relative to a normal is selected in a range of from 10°≦θ≦40°, preferably, 15°≦θ≦35°. Thus, etch rates of the materials composing the multilayer structure portion and materials compoising the insulating layer become nearly equal, whereby etchings at the respective portions can be achieved satisfactorily with high accuracy. As a result, characteristics of the magneto-resistive effect element and the magneto-resistive effect type magnetic head can be stabilized, and the yield thereof can be improved.

TECHNICAL FIELD

[0001] The present invention relates to a method of manufacturing amagneto-resistive effect element and a method of manufacturing amagneto-resistive effect type magnetic head.

BACKGROUND ART

[0002] In recent years, a recording density is progressively increasedin the field of the magnetic recording and magneto-resistive effect typemagnetic heads (MR type magnetic heads) using a giant magneto-resistiveeffect (GMR) element as a magnetic sensing portion are now put intopractical use. Lately, those magneto-resistive effect type magneticheads have achieved a recording density in excess of 50 Gb/inch² (e.g.,Intermag Conference 2000: Fujitsu, Read-Rite).

[0003] In such magnetic head, the MR element portion has a so-called CIP(Current In-Plane) type structure capable of detecting a magnetic fieldby an electrical resistance change occurring when a sense current isusually conducted in a film plane direction and an external magneticfield, i.e., a signal magnetic field corresponding to recordedinformation from a magnetic recording medium is applied to the filmplane in parallel thereto.

[0004] On the other hand, with the increasing demand for a higherrecording density, it has been requested that the elements aremicrominiaturized by selecting materials composing the MR elementportion which can realize a high sensitivity and by using a high-precisepatterning, to be specific, a photolithography technique which canreduce a track width.

[0005] In contrast, as a magneto-resistive element which can exhibit alarger resistance change, there has been proposed based on a CPP(Current Perpendicular to Plane) type structure a spin valve type MR (SVtype GMR) element or a tunnel type MR (TMR) element in which a sensecurrent is conducted in the direction perpendicular to the film plane ofthe MR element.

[0006] Of the MR element of this CPP type structure, the SV type GMRelement can be realized by a film structure substantially similar tothat of the conventional CIP type. Specifically, this magneto-resistiveeffect element includes two ferromagnetic layers separated by a spacerlayer formed of a thin nonmagnetic conductive layer and makes use of aresistance change based upon an electron spin dependent scatteringcaused on these interfaces.

[0007] In this case, one of the ferromagnetic layers is made of amaterial whose saturation coercive force is larger than that of theother ferromagnetic layer, and so has a high saturation magnetic field.

[0008] Further, in this structure, the film thicknesses of therespective layers are optimized depending on mean free paths ofelectrons in the respective layers so that the amount of the resistancechange may be increased.

[0009] The magnetic response of this MR element is a function dependingupon a relative magnetization direction between the two ferromagneticlayers.

[0010] On the other hand, the TMR type element includes twoferromagnetic layers separated by a spacer comprised of a thininsulating tunnel barrier layer and makes use of a resistance changecaused by a magnetic polarization electron tunnel phenomenon.

[0011] One of these ferromagnetic layers has typically a saturationmagnetic field which is higher than that of the other ferromagneticlayer in one direction.

[0012] Then, its insulating tunnel barrier layer has a film thicknesswhich is thin enough to make a quantum mechanics tunnel phenomenon occurbetween the two ferromagnetic layers. This tunnel phenomenon dependsupon an electron spin, whereby a magnetic response of a tunnel typeelement depends upon a relative magnetization direction of theabove-described two ferromagnetic layers and a function of a spinpolarity.

[0013] Because the SV type GMR element and TMR element in the CPPstructure have a still larger amount of resistance change as comparedwith that of the MR element in the above-mentioned CIP structure, ahighly-sensitive MR type magnetic head can be realized theoretically.

[0014] By the way, when data is recorded at a higher recording density,e.g., 100 Gb/inch², in order to detect narrow magnetic recordingpatterns having a width less than 0.1 μm, it is requested to realize ahighly-precise MR element.

[0015] There has been proposed a method of manufacturing amicrominiaturized MR element as what element which can meet with suchrequirements.

[0016] In a method of manufacturing such a microminiaturized MR element,particularly, a MR element including a magnetic flux guide layer, themicrominiaturized MR element manufacturing process involves a processfor simultaneously patterning a portion having a multilayer film ofdifferent materials, particularly, a multilayer structure of aninsulating layer, e.g., aluminum oxide or silicon oxide and a metallayer, and a multilayer structure portion formed by a multilayer ofsubstantially only metal layers.

[0017] This patterning can be executed by ion beam etching method forexample. In this case, because etch rates of aluminum oxide or thesilicon oxide of the above-mentioned insulating layer and the metallayer are remarkably different from each other, there arises a problemthat a micro miniaturized MR element having an aimed structure cannot bemanufactured with a satisfactory yield.

DISCLOSURE OF INVENTION

[0018] It is an object of the present invention to provide a method ofmanufacturing a magneto-resistive effect element and a method ofmanufacturing a magneto-resistive effect type magnetic head which cansolve the above-mentioned problem and can produce a microminiaturized MRelement having an aimed structure with high reliability.

[0019] A method of manufacturing a magneto-resistive effect elementaccording to the present invention is a method of manufacturing amagneto-resistive effect element having a multilayer structure portionin which there are piled at least a magnetic flux guide layer, a freelayer made of a soft magnetic material of which there are piled themagnetization is rotated in response to an external magnetic field, orthe free layer also acting as the magnetic flux guide layer a fixedlayer made of a ferromagnetic material, an antiferromagnetic magneticlayer for fixing the magnetization of the fixed layer and a spacer layerinterposed between the free layer and the fixed layer, namely, an SVtype GMR multilayer structure portion or a TMR multilayer structureportion.

[0020] This manufacturing method comprises a film forming process forforming a multilayer film including at least the antiferromagneticlayer, the fixed layer and the spacer layer, a first patterning processfor patterning this multilayer film after a predetermined pattern, e.g.,a pattern having a predetermined depth length, a process for filling upthe circumference of the multilayer film thus patterned with aninsulating layer, a process for forming the magnetic flux guide layer orthe free layer also acting as the magnetic flux guide layer over thisinsulating layer and the patterned multilayer film, and a secondpatterning process for patterning simultaneously the magnetic flux guidelayer and the above-mentioned multilayer film after a predeterminedpattern, e.g., a pattern having a predetermined width to form theabove-mentioned multilayer structure portion by beam etching.

[0021] Moreover, according to the present invention, when the MR elementincluding the magnetic flux guide layer is formed, the first patterningfor determining the depth of the MR element body, i.e., theabove-mentioned SV type GMR multilayer structure portion or the TMRmultilayer structure portion and the second patterning for determiningthe widths of the MR element body and the magnetic flux guide layer areexecuted by etching in such a manner that the materials comprising theabove-mentioned multilayer structure portion and the materialscomprising the above-mentioned insulating layer at approximately equalthe same etch rate. This is done by selecting an incident angle of anetching beam. To be concrete, if the above-mentioned insulating layeris, e.g. silicon oxide, an angle θ relative to a normal of an etchedplane is selected in the range of 10°≦θ≦40°, preferably, 15°≦θ≦35°.

[0022] Furthermore, in the method of manufacturing the magneto-resistiveeffect type magnetic head according to the present invention, themagneto-resistive effect element forming its magnetic sensing portion ismanufactured by the above-mentioned magneto-resistive effect elementmanufacturing method.

[0023] As described above, in the present invention, the SV type GMRmultilayer structure portion is, as it were, a metallic multilayerstructure portion, whereas the TMR multilayer structure portionincludes, e.g. aluminum oxide Al₂O₃ forming the tunnel barrier layerinterposed as the spacer layer. However, this insulating layer is aextremely thin insulating layer having a thickness of about 0.6 nm, sothat the TMR multilayer structure portion has substantially a metallicmultilayer structure. For this reason, when the magnetic flux guidelayer extending over the metallic multilayer portion and the insulatinglayer is etched together with the insulating layer, it is arranged thatnearly equal etch rates are obtained by selecting the incident angle θof the etching beam. This allows the etching depth of theabove-mentioned multilayer structure portion and its circumference to bemade exactly equal. Therefore, the position of the hard magnetic layerwhich is bias-magnetized for the free layer that will be formed on thisetched portion later on can be determined with high accuracy.

BRIEF DESCRIPTION OF DRAWINGS

[0024]FIGS. 1A, 1B and 1C are a schematic plan view of an example of amagneto-resistive effect element obtained by a manufacturing methodaccording to the present invention and schematic cross-sectional viewtaken along the line B-B and a schematic cross-sectional views takenalong the line C-C, respectively.

[0025]FIGS. 2A, 2B and 2C are a schematic plan view of an example of amagneto-resistive effect type magnetic head obtained by a manufacturingmethod according to the present invention and schematic cross-sectionalviews taken along the line B-B and the line C-C, respectively.

[0026]FIGS. 3A, 3B and 3C are a schematic plan view showing one processof an example of methods of manufacturing a magneto-resistive effectelement and a magneto-resistive effect type magnetic head according tothe present invention, a schematic cross-sectional view taken along theline B-B the line C-C, respectively.

[0027]FIGS. 4A, 4B and 4C are a schematic plan view of one process of anexample of methods of manufacturing a magneto-resistive effect elementand a magneto-resistive effect type magnetic head according to thepresent invention, a schematic cross-sectional view taken along the lineB-B and the line C-C, respectively.

[0028]FIGS. 5A, 5B and 5C are a schematic plan view showing one processof an example of methods of manufacturing a magneto-resistive effectelement and a magneto-resistive effect type magnetic head according tothe present invention, a schematic cross-sectional view taken along theline B-B and the line C-C, respectively.

[0029]FIGS. 6A, 6B and 6C are a schematic plan view showing one processof an example of methods of manufacturing a magneto-resistive effectelement and a magneto-resistive effect type magnetic head according tothe present invention, a schematic cross-sectional views taken along theline B-B and a schematic cross-sectional view taken along the line C-C,respectively.

[0030]FIGS. 7A, 7B and 7C are a schematic plan view showing one processof an example of methods of manufacturing a magneto-resistive effectelement and a magneto-resistive effect type magnetic head according tothe present invention and schematic cross-sectional views taken alongthe line B-B and the line C-C, respectively.

[0031]FIGS. 8A, 8B and 8C are a schematic plan view showing one processof an example of methods of manufacturing a magneto-resistive effectelement and a magneto-resistive effect type magnetic head according tothe present invention and schematic cross-sectional views taken alongthe line B-B and the line C-C, respectively.

[0032]FIGS. 9A, 9B and 9C are a schematic plan view showing one processof an example of methods of manufacturing a magneto-resistive effectelement and a magneto-resistive effect type magnetic head according tothe present invention and schematic cross-sectional view taken along theline B-B and the line C-C, respectively.

[0033]FIGS. 10A, 10B and 10C are a schematic plan view showing oneprocess of an example of methods of manufacturing a magneto-resistiveeffect element and a magneto-resistive effect type magnetic headaccording to the present invention, a schematic cross-sectional viewtaken along the line B-B and the line C-C, respectively.

[0034]FIGS. 11A, 11B and 11C are a schematic plan view showing oneprocess of an example of methods of manufacturing a magneto-resistiveeffect element and a magneto-resistive effect type magnetic headaccording to the present invention and a schematic cross-sectional viewstaken along the line B-B and the line C-C, respectively.

[0035]FIG. 12 is a diagram for explaining a beam incident angle of abeam etching in the present invention.

[0036]FIG. 13 is a diagram showing measured results of a relationshipbetween the beam incident angle of the beam etching and an etch rate inthe present invention.

[0037]FIGS. 14A, 14B and 14C are a perspective view of a main part of anMR element manufactured by a manufacturing method according to thepresent invention and cross-sectional view taken along the line B-B anda cross-sectional views taken along the line C-C, respectively.

[0038]FIGS. 15A, 15B and 15C are a perspective view of a main part of anMR element of a comparative example and a cross-sectional views takenalong the line B-B and a cross-sectional view taken along the line C-C,respectively.

[0039]FIGS. 16A, 16B and 16C are a perspective view of a main part of anMR element of a comparative example and a cross-sectional views takenalong the line B-B and the line C-C, respectively.

[0040]FIG. 17 is a schematic cross-sectional view of an example showinga dual type MR element obtained by a manufacturing method according tothe present invention.

[0041]FIG. 18 is a schematic perspective view showing an example of arecording and reproducing magnetic head using an MR type reproducingmagnetic head obtained by a manufacturing method according to thepresent invention.

BEST MODE FOR CARRYING OUT THE INVENTION

[0042] To begin with, a magneto-resistive effect element (MR element) MRobtained by a manufacturing method according to the present inventionand a magneto-resistive effect type magnetic head H using this MRelement as a magnetic sensing portion will be described with referenceto FIGS. 1 and 2.

[0043] The MR element and the magnetic sensing portion of the MR typemagnetic head can be formed as the aforementioned SV type GMR structureor the aforementioned TMR structure.

[0044]FIGS. 1 and 2 show the MR elements and MR type magnetic heads bothof which have the so-called bottom type structures.

[0045]FIGS. 1A and 2A show schematic plan views of examples of MRelements and MR type magnetic heads obtained by the manufacturingmethods according to the present invention. FIGS. 1B, 2B and FIGS. 1C,2C are schematic cross-sectional views taken along the lines B-B and C-Cof FIGS. 1A and 2A, respectively.

[0046] AS shown in FIGS. 1A to 1C, the MR element includes a stripe-likemagnetic flux guide layer 1 which extends in a depth direction DPperpendicular to a track width direction Tw and whose front end 1 aserves as an end for introducing an external magnetic field, i.e., amagnetic field and to be detected. It also includes a multilayerstructure portion 6 which forms the MR element body at a limited portionon the front end 1 a side of this magnetic flux guide layer 1 or at alimited portion retreating from the front end 1 a in the depth directionby a required distance D. The magnetic flux guide layer 1 is superposedon the free layer 2.

[0047] This multilayer structure portion 6 includes a multilayer filmformed by laminating a free layer 2 made of a soft magnetic material ofwhich the magnetization rotates in response to an external magneticfield, a fixed layer 3 made of a ferromagnetic material, anantiferromagnetic layer 4 for fixing the magnetization of this fixedlayer 3 and a spacer layer 5 interposed between the free layer 2 and thefixed layer 3.

[0048] On both sides of this multilayer structure portion 6 is located ahard magnetic layer 7 in an opposing relation to at least both side endfaces of the free layer 2 and the magnetic flux guide layer 1.

[0049] This hard magnetic layer 7 forms a permanent magnet magnetized soas to apply a bias magnetic field for erasing magnetic domains generatedat both ends of the free layer to improve Barkhausen noise which causesthe magnetization in the free layer 2 to rotate discontinuouslydepending on the external magnetic field.

[0050] These magnetic flux guide layer 1 and multilayer structureportion 6 are disposed between first and second electrodes 11 and 12 toform the CPP structure in which a sense current is conducted between thefirst and second electrodes 11 and 12 so that the sense current may besend to the multilayer structure portion 6 in a layer-piling direction,i.e. in the direction crossing the film plane of each layer.

[0051] As shown in FIGS. 2A to 2C, the MR type magnetic head H uses theabove-mentioned magneto-resistive effect element MR as a magneticsensing portion which is disposed between first and second magneticshields 21 and 22.

[0052] Then, the surface of the front end 1 a of the magnetic flux guidelayer 1 facing outside is employed as a forward surface 8 which is asurface in contact with or opposing to a magnetic recording medium. Whenthis magnetic head H is formed as a floating type magnetic head, e.g, asa slider located at the tip end of gimbals to be floated by the flow ofair produced due to the rotation of a magnetic recording medium such asa magnetic disk thereby producing a space between the head and thesurface of the recording medium, the above-mentioned forward surface 8serves as a so-called ABS (Air Bearing Surface).

[0053] While the first and second electrodes 11 and 12 as well as themagnetic shields 21 and 22 are provided in the illustrated examples,each of these electrodes 11 and 12 can be united with each of magneticshields 21 and 22 can be modified as a magnetic shield also etching asthe electrode.

[0054] In FIGS. 2A TO 2C, elements and parts identical to those of FIGS.1A TO 1C are denoted by identical reference numerals and therefore theirrepeated explanations will be avoided.

[0055] When the above-mentioned multilayer structure portion 6 has theSV type GMR structure, its spacer layer 5 is formed by a nonmagneticconductive layer. When the above-mentioned multilayer structure portionhas the TMR structure, the spacer layer is formed by a tunnel barrierlayer made of a nonmagnetic insulating layer.

[0056] While the magnetic flux guide 1 and the free layer 2 comprised ofindividual layers are shown 1A to 1C and 2A to 2C, in FIGS. The magneticflux guide and the free layer can be formed to have a freelayer/magnetic flux guide structure in which a manner that thestripe-like magnetic flux guide 1 itself forms the free layer 2 or as astructure in which the partial a thickness of the free layer serves asthe magnetic flux guide layer 1.

[0057] While, in the above illustrated example, the front end 1 a of themagnetic flux guide layer 1 opens on the forward surface 8 and themultilayer structure portion 6 of the MR element body forming, e.g. theSV type GMR or TMR element is disposed at the position retreated fromthe forward surface 8 in the depth direction DP by the required distanceD, the present invention is not limited thereto and this multilayerstructure portion 6 may be disposed at the position opening on theforward surface 8.

[0058] However, when the multilayer structure portion 6 is disposed atthe position opening on the forward surface 8, because characteristicsof the MR element body, e.g., its shape and size will be determined in apolish and work process required to form the forward surface 8, thepolish and work process should be done with high accuracy, so thatdisadvantages such as fluctuations of characteristics, non-uniformcharacteristics and decreased yield cannot be avoided. Accordingly, theelement body, i.e., the multilayer structure portion 6 should preferablybe disposed at the position retreated from the forward surface 8 so thatthe magnetic flux guide layer 1 may introduce a external magnetic fieldto be detected, i.e., a magnetic flux.

[0059] Although an example of the method of manufacturing the MR elementand the MR type magnetic head will now be described with reference toFIGS. 3A to 11C, it is needless to say that the manufacturing methodaccording to the present invention is not limited to this example.

[0060]FIGS. 3A to 11A are schematic plan views. FIGS. 3B to 11B andFIGS. 3C to 11C are cross-sectional views taken along the lines B-B andC-C in FIGS. 3A to 11A, respectively.

[0061] As shown in FIGS. 3A to 3C, a first electrode 11 is formed on asubstrate (not shown) made of AlTiC, for example. Then, a multilayerfilm 9 is formed by sequentially piling part of an antiferromagneticlayer 4, a fixed layer 3, a spacer layer 5 and a free layer 2 by meansof, e.g. magnetron sputtering or ion beam sputtering.

[0062] The first electrode 11 is formed of a conductive layer such asTa, Au and Cu having a thickness of, e.g. about 3 nm to 20 nm.

[0063] The antiferromagnetic layer 4 is formed by piling films of PtMn,IrMn, RhMn, PdPtMn, NiMn and the like having thicknesses of, e.g. 6 nmto 30 nm through buffer seed layers (not shown) of Ta, NiFe, Cu, andNiFeCr and the like.

[0064] The fixed layer 3 is made of a ferromagnetic material such asCoFe, NiFe and Co having a thickness of 2 nm to 10 nm and is formed soas to be exchange coupled with the antiferromagnetic layer 4.

[0065] This fixed layer 3 can be formed as a so-called multilayeredferri-layer structure based upon an antiferromagnetic coupling in whicha Ru layer of a nonmagnetic layer is interposed between multilayers,e.g., two layers of, e.g. Co layers.

[0066] The spacer layer 5 is formed of a nonmagnetic layer made of Cuand the like having a thickness of 2 nm to 5 nm for example, in the SVtype GMR structure. In the TMR structure, the spacer layer is formed ofan A1 ₂O₃ of natural Al oxide film or a plasma oxide film having athickness of 0.4 to 2.0 nm for example.

[0067] Further, the soft magnetic layer forming the free layer 2 or partof the free layer 2 is formed of a single layer-or a multilayer film ofCo, CoFe and NiFe having a thickness of 1 nm to 5 nm for example.

[0068] On this multilayer film 9, there is formed a first mask 10serving as an etching mask and a lift-off layer, which will be describedlater, like a stripe extending in the direction of track width Tw. Thisfirst mask 10 can be formed by patterning a photoresist using thephotolithography. Typically, through not shown, this mask 10 is formedof a double-layer resist having an undercut or a bridge-like resist sothat the lift-off can be executed satisfactorily.

[0069] Next, as shown in FIGS. 4A to 4C, using the first mask 10 as anetching mask, the first patterning process is effected on the multilayerfilm 9, e.g. by ion beam etching. As a result, a first stripe portion SIwhich has a stripe shape extending in the track width direction afterthe pattern of the mask 10 is formed. The first stripe portion SI has arequired predetermined depth length L.

[0070] Next, as shown in FIGS. 5A to 5C, a recess or groove G1surrounding the multilayer film 9 of the first stripe portion S1 formedby this etching, i.e., the first patterning process is buried with aninsulating layer 13, e.g. silicon oxide in the present invention, havinga thickness corresponding to the thickness of the multilayer film 9. Theinsulating layer 13 is formed on the whole surface by a suitable meanssuch as magnetron sputtering or ion beam sputtering, and then the mask10 of FIGS. 4A to 4C is removed. By removing this mask 10, theinsulating layer 13 on this mask 10 is removed, i.e. lifted off. Thus,the insulating layer 13 fills up the circumference of the multilayerfilm 9, whereby the surface can be made flat.

[0071] As shown in FIGS. 6A to 6C, on this flat surface, a single filmor a multilayer film of, e.g. Ni, Fe, Co, NiFe, CoFe having a thicknessof 1 nm to 10 nm is formed on the whole surface as the magnetic fluxguide layer 1.

[0072] As shown in FIGS. 7A TO 7C, on the magnetic flux guide layer 1,there is formed a second mask 14 having a stripe shape which extends inthe depth direction and intersects the first stripe portion S1 of themultilayer film 9.

[0073] This second mask 14 can be formed by the same method as that usedto form the above-mentioned first mask 10.

[0074] In order that this second mask 14 may be formed in apredetermined positional relationship with the first stripe portion S1,an exposure mask in the photolithography used to form the second mask 14is precisely positioned with respect to an exposure mask in thephotolithography used to form the aforementioned first mask 10.

[0075] Note that, in this manufacturing method, the exposure masks areprecisely positioned with each other only when this second mask 14 isformed.

[0076] Then, in this positional matching, the stripe lengths of the twomasks are selected so that the second mask 14 may securely intersect thearea where the first mask 10 is formed.

[0077] Next, as shown in FIGS. 8A to 8C, using the second mask 14 as anetching mask, there is formed a second stripe portion S2 having apredetermined required rack width by effecting the second patterningprocess on the magnetic flux guide layer 1, and the multilayer film 9and the insulating layer 13 under the magnetic flux guide layer 1, e.g.by Ar ion beam etching.

[0078] In this manner, there is formed the multilayer structure portion6 having a small area of which the required depth length L is determinedby the first patterning process and of which the required width W thetrack width direction is determined by the second patterning process.

[0079] Particularly, the method according to the present invention ischaracterized by selecting an incident angle of this etching beam, inthis second patterning process, so that etchrates of all componentmaterials of the multilayer structure portion 6 including the magneticflux guide layer 1 may be approximately equal to an etch rate of siliconoxide of the component material of the insulating layer 13.

[0080] In this etching, as shown in FIG. 12, the above-mentioned etchrates can be made nearly equal to each other by selecting an incidentangle θ of an ion beam b to an ion etched surface 31 (an angle to anormal 32 of the ion etched surface 31) in the range of 10°≦θ≦40°,preferably 15°≦θ≦35°.

[0081] In this way, the first stripe portion S1 is etched to thepredetermined track width W, and the multilayer structure portion 6having the SV type GMR structure or the TMR structure made by piling ofthe magnetic flux guide layer 1, the free layer 2, the spacer layer 5,the fixed layer 3 and the antiferromagnetic layer 4 is formed only at aportion where the first and second stripe potions S1 and S2 cross witheach other.

[0082] In this case, as described above, because the etch rates of theinsulating layer 13 made of the silicon oxide and the metal layers aremade approximately equal to each other, it is possible to preventstepped portions and the like from being produced when there exists adifference in the progress of etching is formed between the multilayerfilm 9 forming the structure portion 6 and the other portions.

[0083] Specifically, in an ordinary etching in which the ion beam isintroduced from the vertical direction, as a table 5 shows examples ofthe respective materials and their etch rates, since the etch rate ofthe insulating layer 13 made of silicon oxide is remarkably low comparedwith that of the metallic multilayer portion in the multilayer film 9.Thus, when the etching is satisfactorily executed in the multilayer film9 when the pattern of the multilayer structure portion 6 is formed, anetch residue is produced in the insulating layer 13. Thereafter, therearises a disadvantage when the hard magnetic film is formed on thisinsulating layer 13 as will be described later.

[0084] Next, a groove G2 surrounding the second stripe portion S2 formedby this second patterning process is filled up. As shown in FIGS. 9A to9C the insulating layer 13 made of silicon oxide and the hard magneticlayer 7 are sequentially formed to a thickness corresponding to thethickness of the stripe portion S2 by magnetron sputtering or ion beamsputtering. The second mask 14 of FIGS. 8A to 8C is removed and theinsulating layer 13 and the hard magnetic layer 7 on the second mask arelifted off. The surface is made flat in this manner.

[0085] The insulating layer 13 at this time is made of silicon oxidehaving a thickness of, e.g. 5 nm to 20 nm and the hard magnetic layer 7is made of, e.g. Co—γFe₂O₃ with a high resistance or CoCrPt, CoNiPt,CoPt and the like with a low resistance having a thickness of, e.g. 10nm to 50 nm. The hard magnetic layer 7 is and which is magnetized toform a permanent magnet.

[0086] In this case, the insulating layer 13 is formed so that theinsulating layer may cover on the peripheral side surface of themultilayer structure portion 6 to be interposed between the hardmagnetic layer 7 and the multilayer structure portion 6. Thus, even ifthe hard magnetic layer 7 is made of the above-mentioned low-resistancelayer, the multilayer structure portion 6 and can electrically beinsulated from the hard magnetic layer 7 by the insulating layer 13.

[0087] The position of the hard magnetic layer 7 with respect to alayer-piling direction of the multilayer structure portion 6 is set tobe in a predetermined positional relationship with the free layer 2 andthe magnetic flux guide layer 1 as will be described later.

[0088] Furthermore, as shown in FIGS. 9A to 9C, a third mask 15 whichwill serve as an etching mask and will be used in the lift-off later isformed by photo lithography using a photo resist similarly to theaforementioned respective masks, so as to cover the respective portionsof the stripe-like magnetic flux guide layer 1 and the hard magneticlayer 7 which are finally required.

[0089] Then, using this mask 15 as an etching mask, as shown in FIGS.10A to 10C, a portion of the hard magnetic layer 7 which is not coveredwith this mask 15, a portion of the insulating layer 13 under theportion of hard magnetic layer and the like are removed by etching.

[0090] Subsequently, as shown in FIGS. 11A TO 11C, an insulating layer23 made of silicon oxide or aluminum oxide and the like is formed so asto fill up a groove G3 formed by this etching and the insulating layer23 on the third mask 15 is lifted off by removing the third mask.

[0091] In this way, the surface is made flat and the second electrode 12is formed on this flat surface by a suitable means such as sputtering.

[0092] Then, the wafer thus formed is cut, e.g. into each MR elementalong the surface shown by a dot-and-dash line “a” in FIGS. 11A to 11C,and the desired magneto-resistive effect element MR is obtained bygrinding and processing the forward surface 8 which serves as a surfacefor introducing an external magnetic field, i.e., a magnetic field to bedetected as shown in FIGS. 1A to 1C.

[0093] Moreover, in manufacturing when the magneto-resistive effect typemagnetic head H shown in FIGS. 2A to 2C, each of the first and secondelectrodes 11 and 12 shown in FIGS. 11A to 11C may be made to serve as amagnetic shield also. Alternatively, first and second magnetic shields21 and 22 (not shown) may respectively be made to the outer surfaces ofthe electrodes 11 and 12 to formed the so-called shield type structure.

[0094] As described above, the magneto-resistive effect element MRobtained by the manufacturing method according to the present inventionor the magneto-resistive effect type magnetic head H comprising thiselement MR has the construction in which the multilayer structureportion 6 disposed between the magnetic shields or the electrodes 11 and12, as it were, the element body is surrounded by the insulatingmaterial 13 and so insulated from the hard magnetic layer 7. Thus, evenwhen a sense current is conducted between the two electrodes 11 and 12in a CPP type structure, it is possible to avoid the leakage of thesense current through this hard magnetic layer 7.

[0095] The hard magnetic layer 7 can stabilize the magnetic flux guidelayer 1 and the free layer 2 by applying the magnetic field from thepermanent magnet formed of this hard magnetic layer 7 to the magneticflux guide layer 1 and the free layer 2 along a track width direction.The magnetic flux guide layer 1, the free layer 2 and the hard magneticlayer 7 are magnetostatically coupled with one another magnetically.When the hard magnetic layer 7 is conductive, the film thickness of theabove-mentioned insulating layer 13 interposed between those layers isselected to be so small that the insulating layer can insulate the hardmagnetic electrically.

[0096] As described above, because the MR element body, i.e., themultilayer structure portion 6 structure in which it is buried into theinsulating layer 13 in construction, the magnetic flux guide layer 1 canbe in contact with the whole surface of the free layer 2 and can beextended to the front portions and the rear or the rear portions of themultilayer structure portion 6.

[0097] When the free layer 2 of the MR element body is formed betweenthe front magnetic flux guide and the rear magnetic flux guide, amagnetic flux to be detected is introduced into the front end 1 a of themagnetic flux guide layer 1, which is open on forward surface 8,attenuated through the free layer 2 serving as a detecting portion andlost at the end of the rear magnetic flux guide.

[0098] This means that, when the rear magnetic flux guide is provided,the amount of magnetic flux which passes the magnetic flux detectingportion increases compared with the case where the rear magnetic fluxguide is not provided. As a result, the output signals from the SV typeGMR type and TMR type reproducing having the magnetic flux guide headscan be increased. In short, it is to be understood that the magneticflux guide layer 1 is extremely important for realizing ahigh-sensitivity magnetic head.

[0099] Further, a space between the magnetic shields, i.e., a magneticgap length is selected depending upon a spatial resolution limited by atarget recording density of a magnetic head, e.g., in the range of 50 nmto 100 nm if a target recording density is 100 Gb/inch².

[0100] On the other hand, for example, the thickness of the secondelectrode 11, and the like are selected so that the magnetic flux guidelayer 1 and the free layer 2 are located nearly at the center of thegap.

[0101] As described above, the manufacturing method according to thepresent invention aims to equalize the etch rates to each other byselecting the beam incident angle θ of the ion beam etching in thesecond patterning process. This will be explained below. FIG. 13 showsmeasured results of etch rates obtained when the incident angles θ ofbeam in the Ar ion beam etching and materials of the etched layers arechanged. In this graph, curves 16 a, 16 b and 16 c are such thatmeasured results of etch rates relating to the multilayer film 9 in theSV type GMR structure, similar measured results relating to siliconoxide and similar measured results of etch rates relating to aluminumoxide are potted, respectively.

[0102] As is clear from these curves, when the silicon oxide is used asthe insulating layer 13 and, for example, the incident angle θ of theargon ion beam, is selected in the range of 10° to 40°, a differencebetween the etch rates of the multilayer film 9 and the silicon oxidefilm be made to can be made to fall within the range of ±10%. Further,when the above incident angle is selected in the range of 15° to 35°,the above-mentioned difference can be made to fall within the range of±5%.

[0103] The tables 1 to 4 show relationships among etch rates in therespective material layers, the etching thicknesses of the respectivelayers and the required etching time in the bottom the SV-GMR element,when the etching angle (beam incident angle) θ is selected to be −5°,−15°, −25°, −40°, respectively. TABLE 1 Etching angle θ = −5° EtchingEtching time Etch thickness required Material Film name rate (nm/min)(nm) (min) NiFe Magnetic flux 9 4 0.44 guide layer CoFe Free layer 9 10.11 Cu Spacer layer 15 2.5 0.17 CoFe Fixed layer 9 3 0.33 PtMnAntiferro-ma 12 15 1.25 gnetic layer Ta Electrode 7 5 0.71 Total ofabove-mentioned all layers 30.5 3.02 Silicon oxide Insulating 9 27.23.02 layer layer Aluminum Insulating 4 12.1 3.02 oxide layer layer

[0104] TABLE 2 Etching angle θ = −15° Etching Etching time Etchthickness required Material Film name rate (nm/min) (nm) (min) NiFeMagnetic flux 9 4 0.44 guide layer CoFe Free layer 9 1 0.11 Cu Spacerlayer 16 2.5 0.16 CoFe Fixed layer 9 3 0.33 PtMn Antiferro-ma 12 15 1.25gnetic layer Ta Electrode 7 5 0.71 Total of above-mentioned all layers30.5 3.01 Silicon oxide Insulating 10.5 31.6 3.01 layer layer AluminumInsulating 4 12.0 3.01 oxide layer layer

[0105] TABLE 3 Etching angle θ = −25° Etching Etching time Etchthickness required Material Film name rate (nm/min) (nm) (min) NiFeMagnetic flux 11 4 0.36 guide layer CoFe Free layer 11 1 0.09 Cu Spacerlayer 19 2.5 0.13 CoFe Fixed layer 11 3 0.27 PtMn Antiferro-ma 14 151.07 gnetic layer Ta Electrode 9 5 0.56 Total of above-mentioned alllayers 30.5 2.49 Silicon oxide Insulating 12 29.8 2.48 layer layerAluminum Insulating 4.5 11.2 2.49 oxide layer layer

[0106] TABLE 4 Etching angle θ = −40° Etching Etching time Etchthickness required Material Film name rate (nm/min) (nm) (min) NiFeMagnetic flux 12 4 0.33 guide layer CaFe Free layer 12 1 0.08 Cu Spacerlayer 22 2.5 0.11 CoFe Fixed layer 12 3 0.25 PtMn Antiferro-ma 15 151.00 gnetic layer Ta Electrode 10 5 0.50 Total of above-mentioned alllayers 30.5 2.28 Silicon oxide Insulating 14 31.9 2.27 layer layerAluminum Insulating 5.5 12.5 2.27 oxide layer layer

[0107] TABLE 5 Etching angle θ = 0° Etching Etching time Etch thicknessrequired Material Film name rate (nm/min) (nm) (min) NiFe Magnetic flux8.5 4 0.47 guide layer CoFe Free layer 9 1 0.11 Cu Spacer layer 14.5 2.50.17 CoFe Fixed layer 9 3 0.33 PtMn Antiferro-ma 12 15 1.25 gnetic layerTa Electrode 7 5 0.71 Total of above-mentioned all layers 30.5 3.05Silicon oxide Insulating 8.2 25.0 3.05 layer layer Aluminum Insulating3.2 9.8 3.05 oxide layer layer

[0108] As is clear from FIG. 13 and the tables 1 to 4, when theinsulating layer 13 is made of silicon oxide, the required etching timeof the multilayer film 9 can be approximated to the required etchingtime of the insulating layer 13, even if the thickness of the siliconoxide is increased. In contrast, when the insulating layer is made ofaluminum oxide, the thickness of the aluminum oxide at which therequired etching time can be approximated to that of the multilayer film9 is too small to fit practical use.

[0109] This is an example in which the magneto-resistive effect elementhas the SV type GMR multilayer structure. In the TMR multilayerstructure element, e.g. the aluminum oxide Al₂O₃, forming the tunnelbarrier layer is interposed as the spacer layer. However, thisinsulation layer is an extremely thin insulation layer having athickness of about 0.6 nm and so the TMR multilayer structure issubstantially a metallic multilayer structure. Thus, the etchings can beexecuted uniformly in such a manner that the etch rates are madeapproximately equal to each other by selecting the incident angle θ ofthe etching beam as well.

[0110] As mentioned before, in order to avoid a Barkhausen jump byremoving the magnetic domains generated at the ends of the magnetic fluxguide layer 1 and the free layer 2, the product of the magnetic momentof the permanent magnet formed of the hard magnetic layer 7 by its filmthickness must be made nearly equal to or larger than that of themagnetic flux guide layer 1 and the free layer 2. Because the magneticmoment of the hard magnetic layer 7 is generally smaller than those ofthe magnetic flux guide layer 1 and the free layer 2, a thickness of thehard magnetic layer 7 is selected to be considerably larger than thethose of the magnetic flux guide layer 1 and the free layer 2. Besides,in order that the bias magnetic field generated from the hard magneticlayer 7 may efficiently be applied to the magnetic flux guide layer 1and the free layer 2, at least end faces on the both sides of thesemagnetic flux guide layer 1 and free layer 2 must be placed in apositional relationship exactly opposite to the corresponding end faceof the hard magnetic layer 7.

[0111]FIGS. 14A to 14C shows a geometrical arrangement between themagnetic flux guide layer 1 and the element body, i.e., the multilayerstructure portion 6, which can satisfy the above-described conditionsand the hard magnetic layer 7 located on both outsides of the multilayerstructure portion for applying a stabilizing bias magnetic field to themagnetic flux guide layer 1 and the free layer 2. FIG. 14A is aperspective view and FIGS. 14B and 14C are schematic cross-sectionalviews taken along the lines B-B and C-C in FIG. 14A.

[0112] In FIGS. 14A to 14C, FIG. 14C shows a positional relationshipbetween the hard magnetic layer 7 and the magnetic flux guide layer 1 inthe forward surface serving as the introducing surface of the externalmagnetic field. FIG. 14B shows a positional relationship between thehard magnetic layer 7 and the magnetic flux guide layer 1 in the portionwhere the multilayer structure portion 6 of the MR element body islocated. As these figures show, the hard magnetic layer 7 and themagnetic flux guide layer 1 are formed so as to become flush with eachother.

[0113] In contrast, if the etch rate of the aforementioned insulatinglayer 13, e.g., Al₂O₃ or the like is considerably low unlike that of themultilayer film of the MR element body as FIG. 15A shows a perspectiveview and FIGS. 15B and 15C show schematic cross-sectional views takenalong the lines B-B and C-C in FIG. 15A, when the magnetic flux guidelayer 1 and the hard magnetic layer are flush with each other in FIG.15B, a stepped or level difference is produced in the multilayerstructure portion 6 of the MR element body as shown in FIG. 15C.

[0114] Therefore, such structure widens the magnetic gap length in theforward surface 8, so that the element spatial resolution is lowered.

[0115] When the hard magnetic layer 7 is made thin, in order to preventthe element spatial resolution from being lowered, as FIG. 16A shows aperspective view and FIGS. 16B and 16C show schematic cross-sectionalviews taken along the lines B-B and C-C in FIGS. 1A TO 1C6A, the hardmagnetic layers 7 cannot be disposed at both outside ends of themultilayer structure portion 6 of the MR element body as shown in FIG.16B with the result that a stable sufficient response to the externalmagnetic field cannot be obtained.

[0116] In other words, in order to optimize the element spatialresolution and its operation stability, the same stabilizing bias mustbe applied to the free layer and the magnetic flux guide of the elementbody. For this purpose, the hard magnetic layer and the magnetic fluxguide must be disposed in the same geometrical arrangement.

[0117] When the etch rate of the multilayer structure portion 6 formedof the magnetic metal multilayer film is high, to stabilize both of theelement portion and the magnetic flux guide, the hard magnetic layer 7must have an increased thickness as compared with the case of equal etchrates. At that time, the magnetic gap length at the tip, i.e. , thefront portion of the magnetic flux guide layer 1 which opens on theforward surface and the magnetic gap length at the rear portion of themagnetic flux guide layer, located behind the multilayer structureportion 6 are widened. As a result, the spatial resolution is lowered.When the electrical insulating film for the magnetic flux guide isprovided from to avoid the loss in the current path between the upperand lower electrodes through the element portion, because the etch rateof the insulating layer 13 provided on one of or both of the upper andlower sides of the magnetic flux guide layer 1 is selected to be nearlyequal to that of the magnetic multilayer film in the multilayerstructure portion 6, it is possible to prevent the operation stabilityand the spatial resolution from being deteriorated.

[0118] As described above, according to the manufacturing method of thepresent invention, the positional relationship among the hard magneticlayer 7, the magnetic flux guide layer 1 and the free layer 2 finallyobtained when the etch rates in the second patterning process are madeequal to each other can be arranged in a the satisfactory layoutrelationship. Therefore, the desired MR element and MR type magnetichead having the stable and uniform characteristics can be constructed.

[0119] Moreover, to improve the spatial resolution of the magnetic fluxwith respect to the change of time in the shield type structure, it isimportant that the magnetic gap length defined by the magnetic shields21 and 22 at the front end of the magnetic flux guide layer 1 or in theforward surface 8 facing the multilayer structure 6 of the element bodyis kept constant over the whole track width.

[0120] As described above, providing the magnetic flux guide layer 1enables the magnetic field under detection to be detected efficiently asthe resistance change. In the manufacturing method according to thepresent invention, in order to manufacture the magneto-resistive effectelement and the magneto-resistive effect type magnetic head includingthis magnetic flux guide layer there are performed the first patterningfor defining the depth length relative to the multilayer film formingthe element body and the second patterning in which the insulating layer13 for burying the portion formed by the first patterning and, themagnetic flux guide layer are formed and the patterning of this magneticflux guide layer and the definition of the above-mentioned multilayerfilm are executed at the same time.

[0121] In this method, exposure mask matching is performed substantiallyonly once when exposure masks used in the first and second patterningprocesses are matched with each other. With the above-mentionedarrangement, not only the manufacturing process can be simplified, butalso the element body of high accuracy pattern can be formed. In otherwords, data recorded at a high recording density, e.g. up to 100Gb/inch² can be reproduced, thus allowing the yield and reliability ofthe magneto-resistive effect element and the magneto-resistive effecttype magnetic head to be improved.

[0122] In this case, portions where the multilayer structure materialsare different from each other, in particular, a portion where theinsulating layer 13 exits and a portion where the insulating layer doesnot exist or hardly exists are simultaneously etched in the secondpatterning and besides, the etch rate of the insulating layer isextremely low in the ordinary method. Thus, a uniform etching isobstructed and the aforementioned disadvantage is inevitably broughtabout.

[0123] However, according to the method of the present invention, theetch rates can be made uniform by selecting the angle in this etching,whereby this problem can be solved.

[0124] While the multilayer structure portion 6 forming the MR elementbody has the bottom type of the SV type of GMR or TMR structure in theabove-mentioned example, the present invention is not limited to suchexample.

[0125] In addition, while the multilayer structure portion is formed asa single type of the SV type GMR or TMR structure in the above-mentionedexample, the present invention can be formed as a dual type structure inwhich the free layers 2, the spacer layers 5, the fixed layers 3 and theantiferromagnetic layers 4 are respectively disposed on both surfaces ofthe magnetic flux guide layers 1 as shown in a schematic cross-sectionalview of FIG. 17. In this case, because since the magnetic flux guidelayer 1 and the free layers 2 are disposed at the central portion of themagnetic gap and a pair of the SV type GMR elements or TMR elements aredisposed, the output of the magne of FIGS. 4A to 4C to-resistive effectelement can be enhanced.

[0126] Furthermore, since the magnetic head H according to the presentinvention is the magnetic head for reproducing recorded information fromthe magnetic recording medium, for example, a thin film type ofinduction type recording magnetic head can be superposed on the magnetichead H as one body to form a recording and reproducing magnetic head.

[0127] An example in this case will be described with reference to aperspective view of FIG. 18.

[0128] In this example, the magnetic head H manufactured by theabove-mentioned manufacturing method according to the present inventionis formed between first and second magnetic shield also acting aselectrodes 51 and 52 on a substrate 41 and for example, a thin filmmagnetic recording head 130 of an electromagnetic induction type, issuperposed on the second magnetic shield also acting as electrode 52,thereby allowing the above magnetic head to be formed as the magneticrecording and reproducing head.

[0129] The recording head 130 has a nonmagnetic layer 131 made of SiO₂and the like forming the magnetic gap at its portion opening on theforward surface 8.

[0130] At the rear portion of this recording head, there is formed acoil 132, e.g. by patterning a conductive layer. An insulating layercovers this coil 132. The coil 132 has at its center a through-hole 133bored through the insulating layer and the nonmagnetic layer 131 toexpose the second shield also acting as electrode 52.

[0131] On the other hand, a magnetic core layer 134 is formed on thenonmagnetic layer 131, of which the front end opens on the forwardsurface 8 and which crosses the coil 132 and contacts with the secondshield also acting as electrode layer 52 that is exposed through thethrough-hole 133.

[0132] In this manner, there is formed the thin film recording magnetichead 130 of the electromagnetic induction type in which the magnetic gapg, that is defined by a thickness of the nonmagnetic layer 131 is formedbetween the front end of the magnetic core layer 134 and the secondshield also acting as electrode layer 52.

[0133] On this magnetic head 130 is formed a protecting layer 135 madeof an insulating layer as shown by a dot-and-dash line.

[0134] In this way, there can be formed the recording and reproducingmagnetic head in which the reproducing magnetic head H of themagneto-resistive effect type according to the present invention and thethin film type recording head 130 are integrated as one body.

[0135] Note that the manufacturing method according to the presentinvention as well as the MR element and the MR type magnetic headobtained by this manufacturing method are not limited to theabove-mentioned examples and the present invention can be applied to themanufacturing process of MR elements and MR type magnetic heads havingvarious structures and constructions.

[0136] As described above, according to the manufacturing method of thepresent invention, in the manufacture of a high-output andhigh-sensitivity magneto-resistive effect element including the magneticflux guide layer as well as the magnetic head having the magneticsensing portion formed by that element, the element body including themultilayer structure portion of the SV type GMR structure or TMRstructure having the required width and depth and further the magneticflux guide layer can be formed by the first patterning and the secondpatterning process for forming the insulating layer and aiming atuniform etch rates by selecting the incident angle of the etching beam.In particular, the positional relationship of the hard magnetic layerrelative to the free layer and the magnetic flux guide layer canreliably be set into the predetermined positional relationshipadvantageously.

[0137] Moreover, according to the method of the present invention, theexposure masks are matched substantially only once in the mutualmatching of exposure masks used in the first and second patterningprocesses. With the above-mentioned arrangement, not only themanufacturing process can be simplified, but also the element body ofhigh accuracy pattern can be formed. Thus, data recorded at the highrecording density, e.g. up to 100 Gb/inch² can be reproduced thusallowing, the yield and reliability of the magneto-resistive effectelement and the magneto-resistive effect type magnetic head to beimproved.

1. A method of manufacturing a magneto-resistive effect elementincluding a multilayer structure portion in which there are laminated atleast a magnetic flux guide layer, a free layer made of a soft magneticmaterial of which the magnetization is rotated in response to anexternal magnetic field or said free layer also acting as said magneticflux guide layer, a fixed layer made of a ferromagnetic material, anantiferromagnetic layer for fixing the magnetization of said fixed layerand a spacer layer interposed between said free layer and said fixedlayer, said method of manufacturing said magneto-resistive effectelement comprising: a film-forming process for forming a multilayer filmhaving at least said antiferromagnetic layer, said fixed layer and saidspacer layer; a first patterning process for patterning said multilayerfilm after a predetermined pattern; a filing process for filling up thecircumference of said patterned multilayer film with an insulatinglayer; a layer-forming process for forming said magnetic flux guidelayer or said free layer also acting as said magnetic flux guide layerover said insulating layer and said patterned multilayer film; and asecond patterning process by beam etching for simultaneously patterningsaid magnetic flux guide layer and said multilayer film after apredetermined pattern, to form said multilayer structure portion whereinsaid second patterning is executed by such etching that etch rates ofmaterials composing said multilayer structure portion and materialscomposing said insulating layer are made approximately equal byselecting an incident angle of an etching beam.
 2. A method ofmanufacturing a magneto-resistive effect element according to claim 1,wherein said insulating layer is composed of a silicon oxide film.
 3. Amethod of manufacturing a magneto-resistive effect element according toclaim 1, wherein said incident angle of said etching beam is selected sothat an angle θ relative to a normal of an etched surface may fallwithin the range of 10°≦θ≦40°.
 4. A method of manufacturing amagneto-resistive effect type magnetic head having a magneto-resistiveeffect element in which a magnetic sensing portion includes such amultilayer structure portion that there are laminated at least amagnetic flux guide layer, a free layer made of a soft magnetic materialof which the magnetization is rotated in response to an externalmagnetic field or said free layer also acting as said magnetic fluxguide layer, a fixed layer made of a ferromagnetic material, anantiferromagnetic layer for fixing the magnetization of said fixed layerand a spacer layer interposed between said free layer and said fixedlayer, said method of manufacturing a magneto-resistive effect typemagnetic head comprising: a film-forming process for forming amultilayer film having at least said antiferromagnetic layer, said fixedlayer and said spacer layer; a first patterning process for patterningsaid multilayer film after a predetermined pattern; a filling processfor filling up the circumference of said patterned multilayer film withan insulating layer; a layer-forming process for forming said magneticflux guide layer or said free layer also acting as said magnetic fluxguide layer over said insulating layer and said patterned multilayerfilm; and a second patterning process by beam etching for simultaneouslypatterning said magnetic flux guide layer and said multilayer film aftera predetermined pattern, to form said multilayer structure portionwherein said second patterning is executed by such etching that etchrates of materials composing said multilayer structure portion and ofmaterials composing said insulating layer are made approximately equalby selecting an incident angle of an etching beam.
 5. A method ofmanufacturing a magneto-resistive effect type magnetic head according toclaim 4, wherein said insulating layer is composed of a silicon oxidefilm.
 6. A method of manufacturing a magneto-resistive effect typemagnetic head according to claim 4, wherein said incident angle of saidetching beam is selected so that an angle θ relative to a normal of anetched surface may fall within the range of 10°≦θ≦40°.